dtc015t series npn 100ma 50v digital transistors (bias resistor bu ilt-in transistors) datasheet ll outline parameter value vmt3 emt3f v ceo 50v i c 100ma r 1 100k DTC015TM dtc015teb (sc-105aa) (sc-89) umt3f ll features 1) built-in biasing resistor 2) built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) the bias resistors consist of thin-film resistor s with complete isolation to allow negative biasing of the input. they also have the advantage of completely eliminating parasitic effects. 4) only the on/off conditions need to be set for operation, making the circuit design easy. 5) complementary pnp types: dta015t series 6) lead free/rohs compliant. dtc015tub (sc-85) ll inner circuit ll application b: base switching circuit, inverter circuit, interface circ uit, c: collector driver circuit e: emitter ll packaging specifications part no. package package size taping code reel size (mm) tape width (mm) basic ordering unit.(pcs) marking DTC015TM vmt3 1212 t2l 180 8 8000 61 dtc015teb emt3f 1616 tl 180 8 3000 61 dtc015tub umt3f 2021 tl 180 8 3000 61 www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 1/6 20121023 - rev.001 downloaded from: http:///
dtc015t series d atasheet ll absolute maximum ratings (t a = 25c) parameter symbol values unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma power dissipation DTC015TM p d *1 150 mw dtc015teb 150 dtc015tub 200 junction temperature t j 150 range of storage temperature t stg -55 to +150 ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. collector-base breakdown voltage bv cbo i c = 50a 50 - - v collector-emitter breakdown voltage bv ceo i c = 1ma 50 - - v emitter-base breakdown voltage bv ebo i e = 50a 5 - - v collector cut-off current i cbo v cb = 50v - - 0.5 a emitter cut-off current i ebo v eb = 4v - - 0.5 a collector-emitter saturation voltage v ce(sat) i c / i b = 5ma / 0.25ma - 0.03 0.15 v dc current gain h fe v ce = 10v, i c = 5ma 100 - 600 - input resistance r 1 - 70 100 130 k transition frequency f t *2 v ce = 10v, i e = -5ma, f = 100mhz - 250 - mhz *1 each terminal mounted on a reference footprint *2 characteristics of built-in transistor www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 2/6 20121023 - rev.001 downloaded from: http:///
dtc015t series datasheet ll electrical characteristic curves (t a =25c) fig.1 grounded emitter propagation characteristics f ig.2 grounded emitter output characteristics fig.3 dc current gain vs. collector current fig.4 co llector-emitter saturation voltage vs. collector current www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 3/6 20121023 - rev.001 downloaded from: http:///
dtc015t series datasheet ll di mensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 4/6 20121023 - rev.001 downloaded from: http:///
dtc015t series datasheet ll di mensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 5/6 20121023 - rev.001 downloaded from: http:///
dtc015t series datasheet ll di mensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 6/6 20121023 - rev.001 downloaded from: http:///
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